Semiconductor apparatus, solid state imaging device, imaging apparatus and electronic equipment, and manufacturing method thereof

ABSTRACT

The present technology relates to a semiconductor apparatus, a solid state imaging device, an imaging apparatus and electronic equipment which realize a smaller and thinner size and which enable improvement of optical characteristics, and a manufacturing method thereof. A side electrode  16   c  is formed on a side face of a substrate on which an imaging device  16  is formed. By this side electrode  16   c  being connected to an electrode pad  15   b  on the substrate  15  through a chip wiring  17  formed with solder, the imaging device  16  is electrically connected to the substrate  15 . By this means, because it is possible to electrically connect the imaging device  16  to the substrate  15  without using wire bonding, space required for wire bonding is not required, so that it is possible to realize a smaller and thinner apparatus. The present technology can be applied to an imaging apparatus.

CROSS REFERENCE TO RELATED APPLICATIONS

This application is a U.S. National Phase of International PatentApplication No. PCT/JP2014/081331 filed on Nov. 27, 2014, which claimspriority benefit of Japanese Patent Application No. JP 2013-254730 filedin the Japan Patent Office on Dec. 10, 2013. Each of theabove-referenced applications is hereby incorporated herein by referencein its entirety.

TECHNICAL FIELD

The present technology relates to a semiconductor apparatus, a solidstate imaging device, an imaging apparatus and electronic equipment, anda manufacturing method thereof, and, more particularly, to asemiconductor apparatus, a solid state imaging device, an imagingapparatus and electronic equipment which realize a smaller and thinnersize and which enable improvement of optical characteristics, and amanufacturing method thereof.

BACKGROUND ART

A technique has been proposed which improves optical characteristicsupon assembly of a substrate on which an imaging device typified by acharge coupled device (CCD) and a complementary metal oxidesemiconductor (CMOS) is assembled, and an optical system blockconstituted with a lens, or the like.

For example, it is known that, when there is a mounting wiring locatedbelow a light receiving surface, infrared light is transmissive to abottom, and the infrared light reflected at the wiring appears in anoutput image.

Therefore, in order to prevent the light receiving surface from beingilluminated with the reflected infrared light, a technique has beenproposed which disposes the mounting wiring at an outer periphery of thelight receiving surface and connects an electrode pad on a chip frontface and an implementation pattern on a rear face with a side wiring(see Patent Literature 1).

CITATION LIST Patent Literature

Patent Literature 1: Patent Application No. 2007-165696

SUMMARY OF INVENTION Technical Problem

However, in the above-described technique, while a side portion is usedas a wiring, because the side portion is not used as a mount terminal,and a wiring portion is protected, there is a risk of increasingassembly process.

The present technology has been made in view of such circumstances, andis intended to realize a smaller and thinner size by providing aterminal at a substrate side portion and improve optical characteristicsby removing reflected light through wire bonding.

Solution to Problem

According to one aspect of the present technology, there is provided asemiconductor apparatus including: a chip substrate including apredetermined circuit; and an electrode terminal configured to receivesupply of an electrical signal or power supplied from outside or supplyan electrical signal or power to be outputted to the outside. Theelectrode terminal is provided on a side face of the chip substrate.

The electrode pad can be further included at an end portion of both orat least one of a front face and a rear face of the chip substrate, at aposition corresponding to the electrode terminal provided on the sideface of the chip substrate.

According to one aspect of the present technology, there is provided asolid state imaging device including: a chip substrate including acircuit of an imaging device; and an electrode terminal configured toreceive supply of an electrical signal or power supplied from outside orsupply an electrical signal or power to be outputted to the outside. Theelectrode terminal is provided on a side face of the chip substrate.

The electrode pad can be further included at an end portion of both orat least one of a front face and a rear face of the chip substrate, at aposition corresponding to the electrode terminal provided on the sideface of the chip substrate.

According to one aspect of the present technology, there is provided animaging apparatus including: a chip substrate including a circuit of animaging device; and an electrode terminal configured to receive supplyof an electrical signal or power supplied from outside or supply anelectrical signal or power to be outputted to the outside. The electrodeterminal is provided on a side face of the chip substrate.

The electrode pad can be further included at an end portion of both orat least one of a front face and a rear face of the chip substrate, at aposition corresponding to the electrode terminal provided on the sideface of the chip substrate.

According to one aspect of the present technology, there is providedelectronic equipment including: a chip substrate including a circuit ofan imaging device; and an electrode terminal configured to receivesupply of an electrical signal or power supplied from outside or supplyan electrical signal or power to be outputted to the outside. Theelectrode terminal is provided on a side face of the chip substrate.

The electrode pad can be further included at an end portion of both orat least one of a front face and a rear face of the chip substrate, at aposition corresponding to the electrode terminal provided on the sideface of the chip substrate.

According to one aspect of the present technology, there is provided amanufacturing method of a semiconductor apparatus including a chipsubstrate including a predetermined circuit, and an electrode terminalconfigured to receive supply of an electrical signal or power suppliedfrom outside or supply an electrical signal or power to be outputted tothe outside, the electrode terminal being provided on a side face of thechip substrate, the manufacturing method including: a first step offorming a through-hole on the side face of the chip substrate, at aposition on the wafer on which the electrode terminal is formed; asecond step of applying metal forming the electrode terminal to thethrough-hole; and a third step of cutting out the chip substrate bycutting the wafer along the through-hole.

According to one aspect of the present technology, there is provided amanufacturing method of a solid state imaging device including a chipsubstrate including a circuit of an imaging device, and an electrodeterminal configured to receive supply of an electrical signal or powersupplied from outside or supply an electrical signal or power to beoutputted to the outside, the electrode terminal being provided on aside face of the chip substrate, the manufacturing method including: afirst step of forming a through-hole on the side face of the chipsubstrate, at a position on the wafer on which the electrode terminal isformed; a second step of applying metal forming the electrode terminalto the through-hole; and a third step of cutting out the chip substrateby cutting the wafer along the through-hole.

According to one aspect of the present technology, there is provided amanufacturing method of an imaging apparatus including a chip substrateincluding a circuit of an imaging device, and an electrode terminalconfigured to receive supply of an electrical signal or power suppliedfrom outside or supply an electrical signal or power to be outputted tothe outside, the electrode terminal being provided on a side face of thechip substrate, the manufacturing method including: a first step offorming a through-hole on the side face of the chip substrate, at aposition on the wafer on which the electrode terminal is formed; asecond step of applying metal forming the electrode terminal to thethrough-hole; and a third step of cutting out the chip substrate bycutting the wafer along the through-hole.

According to one aspect of the present technology, there is provided amanufacturing method of electronic equipment including a chip substrateincluding a circuit of an imaging device, and an electrode terminalconfigured to receive supply of an electrical signal or power suppliedfrom outside or supply an electrical signal or power to be outputted tothe outside, the electrode terminal being provided on a side face of thechip substrate, the manufacturing method including: a first step offorming a through-hole on the side face of the chip substrate, at aposition on the wafer on which the electrode terminal is formed; asecond step of applying metal forming the electrode terminal to thethrough-hole; and a third step of cutting out the chip substrate bycutting the wafer along the through-hole.

According to one aspect of the present technology, an electrode terminalwhich receives supply of an electrical signal or power supplied fromoutside or which supplies an electrical signal or power to be outputtedto the outside is provided at a side face of a chip substrate includinga predetermined circuit.

Advantageous Effects of Invention

According to one aspect of the present technology, it is possible torealize a smaller and thinner size and improve optical characteristics.

BRIEF DESCRIPTION OF DRAWINGS

FIG. 1 is a diagram for explaining a configuration of one embodiment ofan imaging apparatus to which the present technology is applied.

FIG. 2 is a diagram for explaining a structure of a side electrode of animaging device in FIG. 1.

FIG. 3 is a flowchart for explaining manufacturing processing of theimaging device in FIG. 1.

FIG. 4 is a diagram for explaining a modified example of the imagingdevice to which the present technology is applied.

DESCRIPTION OF EMBODIMENTS

An embodiment for implementing the present technology (hereinafter,referred to as an embodiment) will be described below. It should benoted that description will be provided in the following order.

-   1. First Embodiment (Example Where Optical System Block is Assembled    on Glass Surface)-   2. Modified Example (Example Where Optical System Block is Assembled    on Frame)    <<1. First Embodiment>>    <Configuration Example of Imaging Apparatus>

FIG. 1 is a block diagram illustrating a configuration example of oneembodiment of an imaging apparatus to which the present technology isapplied.

FIG. 1 illustrates a side face cross-sectional diagram near an imagingdevice and an optical system block, of the imaging apparatus, in whichincident light is incident from above to below in the drawing.

In FIG. 1, an opening portion 15 a is provided at a substrate 15, and animaging device 16 is connected via a chip wiring 17 at a positioncorresponding to the opening portion 15 a on a lower face of thesubstrate 15 in the drawing. Meanwhile, a glass plate 13 is provided onan upper face of the substrate 15.

Further, on the glass plate 13, a lens barrel portion 11 which includesan optical system block 12 having optical characteristics for bothfocusing and focus adjustment or either focusing or focus adjustment isprovided, and fixed with an adhesive 14 applied on the substrate 15 andthe glass plate 13.

According to a configuration as illustrated in FIG. 1, by incident lightincident from above in the drawing being transmissive through theoptical system block 12, the incident light is adjusted so as to befocused on the imaging device 16, transmissive through the glass pate 13and incident on the imaging device 16. The imaging device 16, which is asolid state imaging device typified by a complementary metal-oxidesemiconductor (CMOS), outputs an image signal constituted with a pixelsignal generated through photoelectric conversion with the incidentlight incident in this manner.

<Chip Wiring Connection Imaging Device and Substrate in FIG. 1>

Detail of the chip wiring 17 which connects the imaging device 16 andthe substrate 15 will be described next with reference to FIG. 2. FIG. 2is an enlarged view of a portion at which the chip wiring 17 whichconnects the imaging device 16 and the substrate 15 is provided, anupper part of FIG. 2 illustrates a configuration of only the imagingdevice 16, and a lower part of FIG. 2 illustrates a state where theimaging device 16 is connected to the substrate 15.

As illustrated in the upper part of FIG. 2, in the semiconductorapparatus constituted with the imaging device 16, at an end portion ofthe chip substrate 16 a, a side electrode 16 c is provided at a sideface of the chip substrate 16 a forming the imaging device 16, alongwith an electrode pad 16 b provided on a front face and a rear face (notillustrated).

According to such a configuration, as illustrated in the lower part ofFIG. 2, the electrode pad 15 b provided on the substrate 15 iselectrically connected to the side electrode 16 c by being connectedthrough the chip wiring 17 formed with solder.

As a result, because the electrode pad 15 b is not connected to theelectrode pad 16 b through wire bonding as in related art, spacerequired for installing a wire is not required, which makes it possibleto reduce a connection portion, it is possible to realize a thinner andsmaller apparatus. Further, because the electrode pads are not connectedthrough wire bonding, it is possible to reduce flare or ghost generatedby incident light being reflected at a surface of the wire, so that itis possible to realize higher quality. Still further, concerning thesemiconductor apparatus which configures the imaging device 16, becausethe side face portion is soldered by the chip wiring 17, even when thesubstrate 15 becomes thinner, it is possible to improve strength byfillet formed through soldering.

<Manufacturing Processing of Imaging Device in FIG. 1>

Manufacturing processing of the imaging device 16 in FIG. 1 will bedescribed next with reference to the flowchart of FIG. 3.

In step S1, a wafer formed with silicon, or the like, which forms asubstrate of the imaging device 16 is ground until the wafer has apredetermined thickness. It should be noted that, at this time point, acircuit which configures a plurality of imaging devices 16 and theelectrode pad 16 b are formed on the wafer.

In step S2, through-holes are formed at positions at which individualside faces of the chip substrate 16 a of the imaging device 16 areformed on the wafer using a through silicon via (TSV) technique.

In step S3, the through-holes are subjected metal plating processingusing copper, nickel, palladium, gold, or the like.

In step S4, a boundary of the wafer is cut along the positions at whichthe through-holes subjected to metal plating are provided, andindividual imaging devices 16 are cut out in units of the chip substrate16 a. At this time, because by the through-holes being cut along axes ofthe holes, the portions subjected to metal plating processing areexposed along the axes of the through-holes on the side face of the chipsubstrate 16 a on which the cut-out imaging devices 16 are formed, andthe side electrodes 16 c are formed.

Because the side electrode 16 c is formed through the above processing,as illustrated in FIG. 2, it is possible to electrically connect theimaging device 16 and the substrate 15 with the chip wiring 17.

As a result, because the electrode pad 15 b is not connected to theelectrode pad 16 b through wire bonding as in related art, and spacerequired for installing a wire is not required, it is possible to make aconnection portion smaller, so that it is possible to realize a thinnerand smaller apparatus. Further, because the electrode pad 15 b is notconnected to the electrode pad 16 b through wire bonding, it is possibleto reduce flare or ghost generated by incident light being reflected atthe surface of the wire. Still further, concerning the semiconductorapparatus configuring the imaging device 16, because the side electrode16 c forming the side face of the chip substrate 16 a is soldered by thechip wiring 17, even when the substrate 15 becomes thinner, it ispossible to improve strength by fillet formed through this soldering.

Further, while, in the above description, an example of thesemiconductor apparatus which functions as the imaging device 16 hasbeen described, even with a semiconductor apparatus in which othercircuits are configured on the substrate and which has other functions,it is possible to provide the same advantageous effects by configuring aside electrode on a side face of the chip using the a method similar tothe method described above.

<<2. Modified Example>>

While, in the above description, an example where the opening portion 15a is provided at the substrate 15 and the imaging device is connected tothe lower portion of the substrate 15 in FIG. 1 has been described, forexample, as illustrated in an upper part of FIG. 4, it is also possibleto provide the imaging device 16 on the substrate 15. Also in this case,at the substrate 15, the side electrode 16 c of the imaging device 16 isconnected to the electrode pad 15 b of the substrate 15 through the chipwiring 17.

Further, while, in the above description, an example where the lensbarrel portion 11 including the optical system block 12 is mounted onthe glass plate 13 has been described, the optical system block 12 maybe mounted on a frame provided on the substrate 15.

That is, as illustrated in a middle part and a lower part of FIG. 4, theoptical system block 12 is mounted on the frame 31 provided on thesubstrate 15. Also in this case, at the substrate 15, the side electrode16 c of the imaging device 16 is connected to the electrode pad 15 b ofthe substrate 15 through the chip wiring 17. It should be noted that, inthe middle part of FIG. 4, the opening portion 15 a is provided at thesubstrate 15, and the imaging device 16 is mounted at the correspondingposition at the lower portion in the drawing of the substrate 15.Further, in a lower part of FIG. 4, the opening portion 15 a is notprovided at the substrate 15, and the imaging device 16 is mounted atthe corresponding position at the upper portion in the drawing of thesubstrate 15.

In either case, advantageous effects which are the same as thosedescribed above are provided.

The present technology is not limited to the above-describedembodiments, but various modifications are possible insofar as they arewithin the scope of the present technology.

Additionally, the present technology may also be configured as below.

(1) A semiconductor apparatus including:

a chip substrate including a predetermined circuit; and

an electrode terminal configured to receive supply of an electricalsignal or power supplied from outside or supply an electrical signal orpower to be outputted to the outside,

wherein the electrode terminal is provided on a side face of the chipsubstrate.

(2) The semiconductor apparatus according to (1), further including:

the electrode pad at an end portion of both or at least one of a frontface and a rear face of the chip substrate, at a position correspondingto the electrode terminal provided on the side face of the chipsubstrate.

(3) A solid state imaging device including:

a chip substrate including a circuit of an imaging device; and

an electrode terminal configured to receive supply of an electricalsignal or power supplied from outside or supply an electrical signal orpower to be outputted to the outside,

wherein the electrode terminal is provided on a side face of the chipsubstrate.

(4) The solid state imaging device according to (3), further including:

the electrode pad at an end portion of both or at least one of a frontface and a rear face of the chip substrate, at a position correspondingto the electrode terminal provided on the side face of the chipsubstrate.

(5) An imaging apparatus including:

a chip substrate including a circuit of an imaging device; and

an electrode terminal configured to receive supply of an electricalsignal or power supplied from outside or supply an electrical signal orpower to be outputted to the outside,

wherein the electrode terminal is provided on a side face of the chipsubstrate.

(6) The imaging apparatus according to (5), further including:

the electrode pad at an end portion of both or at least one of a frontface and a rear face of the chip substrate, at a position correspondingto the electrode terminal provided on the side face of the chipsubstrate.

(7) Electronic equipment including:

a chip substrate including a circuit of an imaging device; and

an electrode terminal configured to receive supply of an electricalsignal or power supplied from outside or supply an electrical signal orpower to be outputted to the outside,

wherein the electrode terminal is provided on a side face of the chipsubstrate.

(8) The electronic equipment according to (7), further including:

an electrode pad at an end portion of both or at least one of a frontface and a rear face of the chip substrate, at a position correspondingto the electrode terminal provided on the side face of the chipsubstrate.

(9) A manufacturing method of a semiconductor apparatus including

a chip substrate including a predetermined circuit, and

an electrode terminal configured to receive supply of an electricalsignal or power supplied from outside or supply an electrical signal orpower to be outputted to the outside,

the electrode terminal being provided on a side face of the chipsubstrate, the manufacturing method including:

a first step of forming a through-hole on the side face of the chipsubstrate, at a position on the wafer on which the electrode terminal isformed;

a second step of applying metal forming the electrode terminal to thethrough-hole; and

a third step of cutting out the chip substrate by cutting the waferalong the through-hole.

(10) A manufacturing method of a solid state imaging device including

a chip substrate including a circuit of an imaging device, and

an electrode terminal configured to receive supply of an electricalsignal or power supplied from outside or supply an electrical signal orpower to be outputted to the outside,

the electrode terminal being provided on a side face of the chipsubstrate,

the manufacturing method including:

a first step of forming a through-hole on the side face of the chipsubstrate, at a position on the wafer on which the electrode terminal isformed;

a second step of applying metal forming the electrode terminal to thethrough-hole; and

a third step of cutting out the chip substrate by cutting the waferalong the through-hole.

(11) A manufacturing method of an imaging apparatus including

a chip substrate including a circuit of an imaging device, and

an electrode terminal configured to receive supply of an electricalsignal or power supplied from outside or supply an electrical signal orpower to be outputted to the outside,

the electrode terminal being provided on a side face of the chipsubstrate,

the manufacturing method including:

a first step of forming a through-hole on the side face of the chipsubstrate, at a position on the wafer on which the electrode terminal isformed;

a second step of applying metal forming the electrode terminal to thethrough-hole; and

a third step of cutting out the chip substrate by cutting the waferalong the through-hole.

(12) A manufacturing method of electronic equipment including

a chip substrate including a circuit of an imaging device, and

an electrode terminal configured to receive supply of an electricalsignal or power supplied from outside or supply an electrical signal orpower to be outputted to the outside,

the electrode terminal being provided on a side face of the chipsubstrate,

the manufacturing method including:

a first step of forming a through-hole on the side face of the chipsubstrate, at a position on the wafer on which the electrode terminal isformed;

a second step of applying metal forming the electrode terminal to thethrough-hole; and

a third step of cutting out the chip substrate by cutting the waferalong the through-hole.

REFERENCE SIGNS LIST

-   11 lens barrel portion-   12 optical system block-   13 glass plate-   14 adhesive-   15 substrate-   15 a opening portion-   15 a electrode pad-   16 imaging device-   16 a chip substrate-   16 b electrode pad-   16 c side electrode-   17 chip wiring-   31 frame

The invention claimed is:
 1. A semiconductor apparatus, comprising: achip substrate including a circuit; an electrode terminal configured toat least receive supply of one of an electrical signal or power suppliedfrom outside or the electrode terminal is configured to supply one of anelectrical signal or power to be outputted to the outside, wherein theelectrode terminal is provided on a side face of the chip substrate; anda first electrode pad provided respectively at an end portion of both afront face and a rear face of the chip substrate, wherein the firstelectrode pad is provided at a position corresponding to the electrodeterminal on the side face of the chip substrate.
 2. A solid stateimaging device, comprising: a chip substrate including a circuit of animaging device; an electrode terminal configured to at least receivesupply of one of an electrical signal or power supplied from outside orthe electrode terminal is further configured to supply one of anelectrical signal or power to be outputted to the outside, wherein theelectrode terminal is provided on a side face of the chip substrate; andan electrode pad provided respectively at an end portion of both a frontface and a rear face of the chip substrate, wherein the electrode pad isprovided at a position corresponding to the electrode terminal on theside face of the chip substrate.
 3. An imaging apparatus, comprising: achip substrate including a circuit of an imaging device; an electrodeterminal configured to at least receive supply of one of an electricalsignal or power supplied from outside or the electrode terminal isconfigured to supply one of an electrical signal or power to beoutputted to the outside, wherein the electrode terminal is provided ona side face of the chip substrate; and an electrode pad providedrespectively at an end portion of both a front face and a rear face ofthe chip substrate, wherein the electrode pad is provided at a positioncorresponding to the electrode terminal on the side face of the chipsubstrate.
 4. An electronic equipment, comprising: a chip substrateincluding a circuit of an imaging device; an electrode terminalconfigured to at least receive supply of one of an electrical signal orpower supplied from outside or the electrode terminal is configured tosupply one of an electrical signal or power to be outputted to theoutside, wherein the electrode terminal is provided on a side face ofthe chip substrate; and an electrode pad provided respectively at an endportion of both a front face and a rear face of the chip substrate,wherein the electrode pad is provided at a position corresponding to theelectrode terminal on the side face of the chip substrate.
 5. Amanufacturing method of a semiconductor apparatus, the manufacturingmethod comprising: wherein the semiconductor apparatus includes a chipsubstrate that comprises a circuit and an electrode terminal configuredto at least receive supply of one of an electrical signal or powersupplied from outside or the electrode terminal is configured to supplyone of an electrical signal or power to be outputted to the outside, theelectrode terminal is provided on a side face of the chip substrate andan electrode pad provided respectively at an end portion of both a frontface and a rear face of the chip substrate, at a position correspondingto the electrode terminal provided on the side face of the chipsubstrate; a first step of forming a through-hole on the side face ofthe chip substrate, at a position on a wafer on which the electrodeterminal is formed; a second step of applying metal forming theelectrode terminal to the through-hole; and a third step of cutting outthe chip substrate by cutting the wafer along the through-hole.
 6. Amanufacturing method of a solid state imaging device, the manufacturingmethod comprising: wherein the solid state imaging device includes achip substrate that comprises a circuit and an electrode terminalconfigured to at least receive supply of one of an electrical signal orpower supplied from outside or the electrode terminal is configured tosupply one of an electrical signal or power to be outputted to theoutside, the electrode terminal is provided on a side face of the chipsubstrate and an electrode pad provided respectively at an end portionof both a front face and a rear face of the chip substrate, at aposition corresponding to the electrode terminal provided on the sideface of the chip substrate; a first step of forming a through-hole onthe side face of the chip substrate, at a position on a wafer on whichthe electrode terminal is formed; a second step of applying metalforming the electrode terminal to the through-hole; and a third step ofcutting out the chip substrate by cutting the wafer along thethrough-hole.
 7. A manufacturing method of an imaging apparatus, themanufacturing method comprising: wherein the imaging apparatus includesa chip substrate that comprises a circuit of an imaging device and anelectrode terminal configured to at least receive supply of one of anelectrical signal or power supplied from outside or the electrodeterminal is configured to supply one of an electrical signal or power tobe outputted to the outside, the electrode terminal is provided on aside face of the chip substrate and an electrode pad providedrespectively at an end portion of both a front face and a rear face ofthe chip substrate, at a position corresponding to the electrodeterminal provided on the side face of the chip substrate; a first stepof forming a through-hole on the side face of the chip substrate, at aposition on a wafer on which the electrode terminal is formed; a secondstep of applying metal forming the electrode terminal to thethrough-hole; and a third step of cutting out the chip substrate bycutting the wafer along the through-hole.
 8. A manufacturing method ofan electronic equipment, the manufacturing method comprising: whereinthe electronic equipment includes a chip substrate that comprises acircuit of an imaging device and an electrode terminal configured to atleast receive supply of one of an electrical signal or power suppliedfrom outside or the electrode terminal is configured to supply one of anelectrical signal or power to be outputted to the outside, the electrodeterminal is provided on a side face of the chip substrate and anelectrode pad is provided respectively at an end portion of both a frontface and a rear face of the chip substrate, at a position correspondingto the electrode terminal provided on the side face of the chipsubstrate; a first step of forming a through-hole on the side face ofthe chip substrate, at a position on a wafer on which the electrodeterminal is formed; a second step of applying metal forming theelectrode terminal to the through-hole; and a third step of cutting outthe chip substrate by cutting the wafer along the through-hole.
 9. Thesemiconductor apparatus according to claim 1, wherein the chip substrateis provided on a substrate.
 10. The semiconductor apparatus according toclaim 9, further comprising: a second electrode pad provided on thesubstrate, and the second electrode pad is connected to the electrodeterminal through a wiring.